PART |
Description |
Maker |
2SC5545ZS-TL-E |
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR LEAD FREE, SC-61AA, MPAK-4 Silicon NPN Epitaxial VHF / UHF wide band amplifier
|
Renesas Electronics Corporation
|
JDH2S01T |
UHF Band Mixer Diode Silicon Epitaxial Schottky Barrier Type UHF Band Mixer
|
Toshiba Corporation
|
MT6C04AS |
Transistor Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application
|
TOSHIBA
|
2SC2952 |
The 2SC2592 is a High Frequency Transistor Designed for General Purpose VHF-UHF Amplifier Applications. UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-39
|
Advanced Semiconductor, Inc. ASI
|
UTV120 UTV200 |
12 Watts, 26.5 Volts, Class A UHF Television - Band IV & V COMMON EMITTER transistor 20 Watts, 26.5 Volts, Class A UHF Television - Band IV & V
|
GHZTECH[GHz Technology]
|
2SK3074 EE08686 |
N CHANNEL MOS TYPE (RF POWER MOSFET FOR VHF- AND UHF-BAND POWER AMPLIFIER) From old datasheet system RF POWER MOSFET FOR VHF - AND UHF-BAND POWER AMPLIFIER
|
Toshiba Semiconductor
|
BLF872 BLF872-2015 |
UHF power LDMOS transistor UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
|
NXP Semiconductors Quanzhou Jinmei Electro...
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1N5472A 1N5466C TX-1N5469C TX-1N5468B TX-1N5446C 1 |
VHF-UHF BAND, 47 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 VHF-UHF BAND, 18 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 VHF-UHF BAND, 27 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 VHF-UHF BAND, 22 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 VHF-UHF BAND, 100 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 VHF-UHF BAND, 10 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 VHF-UHF BAND, 68 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 VHF-UHF BAND, 20 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 VHF-UHF BAND, 6.8 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 VHF-UHF BAND, 56 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 VHF-UHF BAND, 39 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 VHF-UHF BAND, 8.2 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 VHF-UHF BAND, 33 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 VHF-UHF BAND, 12 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
|
|
KDV240E |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF RADIO) 变容二极管外延硅平面二极管(VCO的超高频无线电) VCO for UHF Band Radio
|
KEC(Korea Electronics) Korea Electronics (KEC)
|
BFS17P Q62702-F940 BFS17PQ62702-F940 |
NPN Silicon RF Transistor (For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA) UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236 CAP 15000PF X7R 250VAC X2 2220 TRANSISTOR UHF BIPOLAR BREITBAND From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
GLP16-400M |
UHF Band
|
Soshin
|
GLP-401 |
UHF Band
|
Soshin
|
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